լи
Back to
Associate Professor Rajib Rahman

Associate Professor Rajib Rahman

Associate Professor

PhD, Purdue University, USA, 2009.

Masters, Purdue University, USA, 2005.

Bachelor of Arts, Gettysburg College, USA, 2002.

Science
School of Physics

I am a computational physicist who develops advanced simulation techniques to understand quantum materials and devices. My research is interdisciplinary in scope and spreads over condensed matter physics, electrical engineering, material science, and computational science. My objective is to develop future electronics and computing technologies utilizing novel quantum phenomena in condensed matter. Solid-state quantum computing is one of my active areas of research. I have developed computational tools that can simulate various aspects of semiconductor qubits such as electronic structure, response to electric and magnetic fields, many-body interactions, and spin-lattice and spin-spin interactions. I am also interested in emerging 2D and topological materials for low energy electronics.
Phone
+61 2 9065 1880
E-mail
rajib.rahman@unsw.edu.au
Location
Old Main Bldg, G57D
  • Book Chapters | 2015
    Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2015, 'Multimillion Atom Simulation of Electronic and Optical Properties of Nanoscale Devices Using NEMO 3-D', in Encyclopedia of Complexity and Systems Science, Springer Berlin Heidelberg, pp. 1 - 69,
    Book Chapters | 2013
    Rahman R; Hollenberg LCL; Klimeck G, 2013, 'Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon', in Prati E; Shinada T (ed.), SINGLE-ATOM NANOELECTRONICS, PAN STANFORD PUBLISHING PTE LTD, pp. 41 - 59,
    Book Chapters | 2013
    Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230,
    Book Chapters | 2012
    Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412,
    Book Chapters | 2012
    Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398,
    Book Chapters | 2012
    2012, 'Dopant Metrology in Advanced FinFETs', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 417 - 443,
    Book Chapters | 2012
    2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416,
    Book Chapters | 2009
    Ahmed* S; Kharche* N; Rahman* R; Usman* M; Lee* S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, 'Multimillion Atom Simulations with Nemo3D', in Encyclopedia of Complexity and Systems Science, Springer New York, pp. 5745 - 5783,
  • Journal articles | 2024
    Aliyar T; Ma H; Krishnan R; Singh G; Chong BQ; Wang Y; Verzhbitskiy I; Yu Wong CP; Johnson Goh KE; Shen ZX; Koh TS; Rahman R; Weber B, 2024, 'Symmetry Breaking and Spin-Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS2 Monolayers', Nano Letters, 24, pp. 2142 - 2148,
    Journal articles | 2024
    Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng MK; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2024, 'Bounds to electron spin qubit variability for scalable CMOS architectures', Nature Communications, 15,
    Journal articles | 2024
    Hsueh YL; Keith D; Chung Y; Gorman SK; Kranz L; Monir S; Kembrey Z; Keizer JG; Rahman R; Simmons MY, 2024, 'Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale', Advanced Materials, 36,
    Journal articles | 2024
    Kranz L; Osika EN; Monir S; Hsueh YL; Fricke L; Hile SJ; Chung Y; Keizer JG; Rahman R; Simmons MY, 2024, 'Exploiting Atomic Control to Show When Atoms Become Molecules', Advanced Functional Materials, 34,
    Journal articles | 2024
    Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh YL; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2024, 'Impact of measurement backaction on nuclear spin qubits in silicon', Physical Review B, 109,
    Journal articles | 2024
    Munia MM; Monir S; Osika EN; Simmons MY; Rahman R, 2024, 'Superexchange coupling of donor qubits in silicon', Physical Review Applied, 21,
    Journal articles | 2024
    Reiner J; Chung Y; Misha SH; Lehner C; Moehle C; Poulos D; Monir S; Charde KJ; Macha P; Kranz L; Thorvaldson I; Thorgrimsson B; Keith D; Hsueh YL; Rahman R; Gorman SK; Keizer JG; Simmons MY, 2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology,
    Journal articles | 2023
    Cifuentes J; Tanttu T; Gilbert W; Huang J; Vahapoglu E; Leon R; Serrano S; Otter D; Dunmore D; Mai P; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang C-H; Escott C; Lim WH; Hudson F; Rahman R; Dzurak A; Saraiva A, 2023, 'Bounds to electron spin qubit variability for scalable CMOS architectures', ,
    Journal articles | 2023
    Donnelly MB; Munia MM; Keizer JG; Chung Y; Huq AMSE; Osika EN; Hsueh YL; Rahman R; Simmons MY, 2023, 'Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions', Advanced Functional Materials, 33,
    Journal articles | 2023
    Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5,
    Journal articles | 2023
    Jiang Y; Zhou S; Mofarah SS; Niu R; Sun Y; Rawal A; Ma H; Xue K; Fang X; Toe CY; Chen WF; Chen YS; Cairney JM; Rahman R; Chen Z; Koshy P; Wang D; Sorrell CC, 2023, 'Efficient and stable piezo-photocatalytic splitting of water and seawater by interfacial engineering of Na0.5Bi0.5TiO3/Na0.5Bi4.5Ti4O15 self-generated heterojunctions', Nano Energy, 116,
    Journal articles | 2023
    Jones MT; Monir MS; Krauth FN; Macha P; Hsueh YL; Worrall A; Keizer JG; Kranz L; Gorman SK; Chung Y; Rahman R; Simmons MY, 2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610,
    Journal articles | 2023
    Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35,
    Journal articles | 2023
    Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35,
    Journal articles | 2023
    Krishnan R; Biswas S; Hsueh YL; Ma H; Rahman R; Weber B, 2023, 'Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor', Nano Letters, 23, pp. 6171 - 6177,
    Journal articles | 2023
    Losert MP; Eriksson MA; Joynt R; Rahman R; Scappucci G; Coppersmith SN; Friesen M, 2023, 'Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells', Physical Review B, 108,
    Journal articles | 2023
    Roknuzzaman M; Bharadwaj S; Wang Y; Khandekar C; Jiao D; Rahman R; Jacob Z, 2023, 'First-principles study of large gyrotropy in MnBi for infrared thermal photonics', Physical Review B, 108,
    Journal articles | 2023
    Sun W; Bharadwaj S; Yang LP; Hsueh YL; Wang Y; Jiao D; Rahman R; Jacob Z, 2023, 'Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations', Physical Review Applied, 19,
    Journal articles | 2022
    Cao C; Zhong Y; Chandula Wasalathilake K; Tadé MO; Xu X; Rabiee H; Roknuzzaman M; Rahman R; Shao Z, 2022, 'A low resistance and stable lithium-garnet electrolyte interface enabled by a multifunctional anode additive for solid-state lithium batteries', Journal of Materials Chemistry A, 10, pp. 2519 - 2527,
    Journal articles | 2022
    Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2022, 'Nonadiabatic quantum control of valley states in silicon', Physical Review B, 105,
    Journal articles | 2022
    Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17,
    Journal articles | 2022
    Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach', Communications Physics, 5,
    Journal articles | 2022
    Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Author Correction: Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach (Communications Physics, (2022), 5, 1, (165), 10.1038/s42005-022-00948-6)', Communications Physics, 5,
    Journal articles | 2022
    McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2022, 'SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits', Nature Communications, 13,
    Journal articles | 2022
    Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106,
    Journal articles | 2022
    Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17,
    Journal articles | 2022
    Paquelet Wuetz B; Losert MP; Koelling S; Stehouwer LEA; Zwerver AMJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2022, 'Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots', Nature Communications, 13,
    Journal articles | 2022
    Poursoti Z; Sun W; Bharadwaj S; Malac M; Iyer S; Khosravi F; Cui K; Qi L; Nazemifard N; Jagannath R; Rahman R; Jacob Z, 2022, 'Deep ultra-violet plasmonics: exploiting momentum-resolved electron energy loss spectroscopy to probe germanium', Optics Express, 30, pp. 12630 - 12638,
    Journal articles | 2022
    Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, 'Optimisation of electron spin qubits in electrically driven multi-donor quantum dots', npj Quantum Information, 8,
    Journal articles | 2022
    Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105,
    Journal articles | 2022
    Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, 2, pp. 025002 - 025002,
    Journal articles | 2021
    Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2021, 'Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon', Nano Letters, 21, pp. 1517 - 1522,
    Journal articles | 2021
    Gyure MF; Kiselev AA; Ross RS; Rahman R; Van de Walle CG, 2021, 'Materials and device simulations for silicon qubit design and optimization', MRS Bulletin, 46, pp. 634 - 641,
    Journal articles | 2021
    Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622,
    Journal articles | 2020
    Mazzola F; Chen CY; Rahman R; Zhu XG; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2020, 'The sub-band structure of atomically sharp dopant profiles in silicon', npj Quantum Materials, 5,
    Journal articles | 2020
    Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2020, 'Electron g -factor engineering for nonreciprocal spin photonics', Physical Review B, 101,
    Journal articles | 2020
    Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11,
    Journal articles | 2019
    Ameen TA; Ilatikhameneh H; Fay P; Seabaugh A; Rahman R; Klimeck G, 2019, 'Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs', IEEE Transactions on Electron Devices, 66, pp. 736 - 742,
    Journal articles | 2019
    Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, 'Aharonov–Bohm interference of fractional quantum Hall edge modes', Nature Physics, 15, pp. 563 - 569,
    Journal articles | 2019
    Pang CS; Chen CY; Ameen T; Zhang S; Ilatikhameneh H; Rahman R; Klimeck G; Chen Z, 2019, 'WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing', Small, 15,
    Journal articles | 2019
    Wu P; Ameen T; Zhang H; Bendersky LA; Ilatikhameneh H; Klimeck G; Rahman R; Davydov AV; Appenzeller J, 2019, 'Complementary Black Phosphorus Tunneling Field-Effect Transistors', ACS Nano, 13, pp. 377 - 385,
    Journal articles | 2018
    Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, 9, pp. 1075 - 1084,
    Journal articles | 2018
    Chen CY; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, 'Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs', IEEE Transactions on Electron Devices, 65, pp. 4614 - 4621,
    Journal articles | 2018
    Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2018, 'Switching Mechanism and the Scalability of Vertical-TFETs', IEEE Transactions on Electron Devices, 65, pp. 3065 - 3068,
    Journal articles | 2018
    Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Sahasrabudhe H; Klimeck G; Morello A; Dzurak AS; Rahman R, 2018, 'Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability', Physical Review B, 97,
    Journal articles | 2018
    Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2018, 'Valley dependent anisotropic spin splitting in silicon quantum dots', npj Quantum Information, 4,
    Journal articles | 2018
    Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459,
    Journal articles | 2018
    Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2018, 'Dramatic impact of dimensionality on the electrostatics of P-N junctions and its sensing and switching applications', IEEE Transactions on Nanotechnology, 17, pp. 293 - 298,
    Journal articles | 2018
    Ilatikhameneh H; Ameen TA; Chen C; Klimeck G; Rahman R, 2018, 'Sensitivity Challenge of Steep Transistors', IEEE Transactions on Electron Devices, 65, pp. 1633 - 1639,
    Journal articles | 2018
    Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2018, 'Optimization of edge state velocity in the integer quantum Hall regime', Physical Review B, 97,
    Journal articles | 2018
    Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8,
    Journal articles | 2018
    Shekhar P; Pendharker S; Sahasrabudhe H; Vick D; Malac M; Rahman R; Jacob Z, 2018, 'Extreme ultraviolet plasmonics and Cherenkov radiation in silicon', Optica, 5, pp. 1590 - 1596,
    Journal articles | 2018
    Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, pp. 195301,
    Journal articles | 2018
    Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, 4,
    Journal articles | 2017
    Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, 'Combination of Equilibrium and Nonequilibrium Carrier Statistics into an Atomistic Quantum Transport Model for Tunneling Heterojunctions', IEEE Transactions on Electron Devices, 64, pp. 2512 - 2518,
    Journal articles | 2017
    Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2017, 'Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene', IEEE Electron Device Letters, 38, pp. 130 - 133,
    Journal articles | 2017
    Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen TA; Rahman R; Rodwell MJW; Klimeck G, 2017, 'A Multiscale Modeling of Triple-Heterojunction Tunneling FETs', IEEE Transactions on Electron Devices, 64, pp. 2728 - 2735,
    Journal articles | 2017
    Rahman R; Ilatikhameneh H; Ameen T; Klimeck G, 2017, '(Invited) Energy Efficient Transistors with 2D Materials', ECS Meeting Abstracts, MA2017-01, pp. 990 - 990,
    Journal articles | 2017
    Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, 3,
    Journal articles | 2017
    Zheng C; Zhang Q; Weber B; Ilatikhameneh H; Chen F; Sahasrabudhe H; Rahman R; Li S; Chen Z; Hellerstedt J; Zhang Y; Duan WH; Bao Q; Fuhrer MS, 2017, 'Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures', ACS Nano, 11, pp. 2785 - 2793,
    Journal articles | 2016
    Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Few-layer phosphorene: An ideal 2D material for tunnel transistors', Scientific Reports, 6,
    Journal articles | 2016
    Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2016, 'Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET', IEEE Journal of the Electron Devices Society, 4, pp. 124 - 128,
    Journal articles | 2016
    Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, 'Saving Moore's Law Down to 1 nm Channels with Anisotropic Effective Mass', Scientific Reports, 6,
    Journal articles | 2016
    Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, 'Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots', IEEE Journal of Quantum Electronics, 52,
    Journal articles | 2016
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, 'Design rules for high performance tunnel transistors from 2-D materials', IEEE Journal of the Electron Devices Society, 4, pp. 260 - 265,
    Journal articles | 2016
    Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Can Homojunction Tunnel FETs Scale below 10 nm?', IEEE Electron Device Letters, 37, pp. 115 - 118,
    Journal articles | 2016
    Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2016, 'From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling', IEEE Transactions on Electron Devices, 63, pp. 2871 - 2878,
    Journal articles | 2016
    Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, 'Transport of spin qubits with donor chains under realistic experimental conditions', Physical Review B, 94,
    Journal articles | 2016
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7,
    Journal articles | 2016
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768,
    Journal articles | 2016
    Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques (vol 6, 31830, 2016)', SCIENTIFIC REPORTS, 6,
    Journal articles | 2016
    Wang Y; Chen CY; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, 6,
    Journal articles | 2016
    Wang Y; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2016, 'Highly tunable exchange in donor qubits in silicon', npj Quantum Information, 2,
    Journal articles | 2015
    Chu T; Ilatikhameneh H; Klimeck G; Rahman R; Chen Z, 2015, 'Electrically Tunable Bandgaps in Bilayer MoS2', Nano Letters, 15, pp. 8000 - 8007,
    Journal articles | 2015
    Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, 'Dielectric Engineered Tunnel Field-Effect Transistor', IEEE Electron Device Letters, 36, pp. 1097 - 1100,
    Journal articles | 2015
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, 'Scaling Theory of Electrically Doped 2D Transistors', IEEE Electron Device Letters, 36, pp. 726 - 728,
    Journal articles | 2015
    Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, 'Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, pp. 12 - 18,
    Journal articles | 2015
    Laucht A; Muhonen J; Mohiyaddin F; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak A; Morello A, 2015, 'Electrically controlling single-spin qubits in a continuous microwave field', Science Advances,
    Journal articles | 2015
    Li W; Sharmin S; Ilatikhameneh H; Rahman R; Lu Y; Wang J; Yan X; Seabaugh A; Klimeck G; Jena D; Fay P, 2015, 'Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, pp. 28 - 34,
    Journal articles | 2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, pp. 203110,
    Journal articles | 2015
    Neupane MR; Rahman R; Lake RK, 2015, 'Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals', Physical Chemistry Chemical Physics, 17, pp. 2484 - 2493,
    Journal articles | 2015
    Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, 'A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations', Journal of Applied Physics, 118,
    Journal articles | 2015
    Tosi G; Mohiyaddin FA; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, 'Silicon quantum processor with robust long-distance qubit couplings', arxiv,
    Journal articles | 2015
    Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, pp. 245209,
    Journal articles | 2015
    Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, 27,
    Journal articles | 2015
    Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, 27,
    Journal articles | 2014
    Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R; Buch H, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, 113, pp. 246406,
    Journal articles | 2014
    Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, 'Coherent control of a single Si 29 nuclear spin qubit', Physical Review Letters, 113,
    Journal articles | 2014
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610,
    Journal articles | 2014
    Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, 9, pp. 430 - 435,
    Journal articles | 2013
    Buch H; Mahapatra S; Rahman R; Morello A; Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature communications, 4, pp. Article number: 2017,
    Journal articles | 2013
    Mohiyaddin FA; Rahman R; Kalra R; Klimeck ; Hollenberg ; Pla JJ; Dzurak AS; Morello A, 2013, 'Noninvasive spatial metrology of single-atom devices', Nano Letters, 13, pp. 1903 - 1909,
    Journal articles | 2013
    Nguyen KT; Lilly MP; Nielsen E; Bishop N; Rahman R; Young R; Wendt J; Dominguez J; Pluym T; Stevens J; Lu TM; Muller R; Carroll MS, 2013, 'Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot', Nano Letters, 13, pp. 5785 - 5790,
    Journal articles | 2013
    Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, 110, pp. 49901 - 049901,
    Journal articles | 2012
    Neupane MR; Lake RK; Rahman R, 2012, 'Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores', Journal of Applied Physics, 112,
    Journal articles | 2012
    Nielsen E; Rahman R; Muller RP, 2012, 'A many-electron tight binding method for the analysis of quantum dot systems', Journal of Applied Physics, 112,
    Journal articles | 2012
    Rahman R; Nielsen E; Muller RP; Carroll MS, 2012, 'Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric', Physical Review B - Condensed Matter and Materials Physics, 85,
    Journal articles | 2012
    Witzel WM; Rahman R; Carroll MS, 2012, 'Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge', Physical Review B - Condensed Matter and Materials Physics, 85,
    Journal articles | 2011
    Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, 107, pp. 136602-1 - 136602-5,
    Journal articles | 2011
    Neupane MR; Lake RK; Rahman R, 2011, 'Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals', Journal of Applied Physics, 110,
    Journal articles | 2011
    Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, 84, pp. 115458-1 - 115458-7,
    Journal articles | 2011
    Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2011, 'Stark tuning of the charge states of a two-donor molecule in silicon', Nanotechnology, 22,
    Journal articles | 2011
    Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, 83,
    Journal articles | 2011
    Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, 83, pp. 195323-1 - 195323-5,
    Journal articles | 2010
    Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, 'Coherent electron transport by adiabatic passage in an imperfect donor chain', Physical Review B - Condensed Matter and Materials Physics, 82,
    Journal articles | 2009
    Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, 'Mapping donor electron wave function deformations at a sub-bohr orbit resolution', Physical Review Letters, 103,
    Journal articles | 2009
    Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10,
    Journal articles | 2009
    Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5,
    Journal articles | 2009
    Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, 'Atomistic simulations of adiabatic coherent electron transport in triple donor systems', Physical Review B - Condensed Matter and Materials Physics, 80,
    Journal articles | 2008
    Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17,
    Journal articles | 2008
    Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661,
    Journal articles | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6,
    Journal articles | 2008
    Naumov M; Lee S; Haley B; Bae H; Clark S; Rahman R; Ryu H; Saied F; Klimeck G, 2008, 'Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D', Journal of Computational Electronics, 7, pp. 297 - 300,
    Journal articles | 2007
    Klimeck G; Ahmed SS; Bae H; Clark S; Haley B; Lee S; Naumov M; Ryu H; Saied F; Prada M; Korkusinski M; Boykin TB; Rahman R, 2007, 'Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks', IEEE Transactions on Electron Devices, 54, pp. 2079 - 2089,
    Journal articles | 2007
    Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, 'High precision quantum control of single donor spins in silicon', Physical Review Letters, 99,
  • Working Papers | 2023
    Cifuentes J; Tanttu T; Gilbert W; Huang J; Vahapoglu E; Leon R; Serrano S; Otter D; Dunmore D; Mai P; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang C-H; Escott C; Lim WH; Hudson F; Rahman R; Dzurak A; Saraiva A, 2023, Bounds to electron spin qubit variability for scalable CMOS architectures, ,
  • Preprints | 2024
    Aliyar T; Ma H; Krishnan R; Singh G; Chong BQ; Wang Y; Verzhbitskiy I; Wong CPY; Goh KEJ; Shen ZX; Koh TS; Rahman R; Weber B, 2024, Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers, ,
    Preprints | 2023
    Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2023, Bounds to electron spin qubit variability for scalable CMOS architectures,
    Preprints | 2023
    Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2023, Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays, ,
    Preprints | 2023
    Krishnan R; Biswas S; Hsueh Y-L; Ma H; Rahman R; Weber B, 2023, Spin-valley locking for in-gap quantum dots in a MoS2 transistor, ,
    Preprints | 2023
    Losert MP; Eriksson MA; Joynt R; Rahman R; Scappucci G; Coppersmith SN; Friesen M, 2023, Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells, ,
    Preprints | 2023
    Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh Y-L; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2023, Impact of measurement backaction on nuclear spin qubits in silicon, ,
    Preprints | 2023
    Munia MM; Monir S; Osika EN; Simmons MY; Rahman R, 2023, Superexchange coupling of donor qubits in silicon, ,
    Preprints | 2023
    Roknuzzaman M; Bharadwaj S; Wang Y; Khandekar C; Jiao D; Rahman R; Jacob Z, 2023, First-Principles Study of Large Gyrotropy in MnBi for Infrared Thermal Photonics, ,
    Preprints | 2022
    Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, Optimisation of electrically-driven multi-donor quantum dot qubits, ,
    Preprints | 2022
    Sun W; Bharadwaj S; Yang L-P; Hsueh Y-L; Wang Y; Jiao D; Rahman R; Jacob Z, 2022, Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations, ,
    Preprints | 2021
    Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2021, Non-adiabatic quantum control of valley states in silicon, ,
    Preprints | 2021
    Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, ,
    Preprints | 2021
    McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2021, SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits, ,
    Preprints | 2021
    Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, ,
    Preprints | 2021
    Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, ,
    Preprints | 2021
    Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, ,
    Preprints | 2021
    Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, ,
    Preprints | 2021
    Wuetz BP; Losert MP; Koelling S; Stehouwer LEA; Zwerver A-MJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2021, Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots, ,
    Preprints | 2020
    Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon, ,
    Preprints | 2019
    Mazzola F; Chen C-Y; Rahman R; Zhu X-G; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2019, The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon, ,
    Preprints | 2019
    Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, Aharonov-Bohm interference of fractional quantum Hall edge modes, ,
    Preprints | 2019
    Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2019, Electron g-factor engineering for non-reciprocal spin photonics, ,
    Preprints | 2018
    Chen C-Y; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, Channel thickness optimization for ultra thin and 2D chemically doped TFETs, ,
    Preprints | 2018
    Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, Addressable electron spin resonance using donors and donor molecules in silicon, ,
    Preprints | 2017
    Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions, ,
    Preprints | 2017
    Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2017, Switching Mechanism and the Scalability of vertical-TFETs, ,
    Conference Papers | 2017
    Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2017, 'Transport in vertically stacked hetero-structures from 2D materials', in Journal of Physics: Conference Series,
    Conference Papers | 2017
    Fay P; Li W; Digiovanni D; Cao L; Ilatikhameneh H; Chen F; Ameen T; Rahman R; Klimeck G; Lund C; Keller S; Islam SM; Chaney A; Cho Y; Jena D, 2017, 'III-N heterostructure devices for low-power logic', in China Semiconductor Technology International Conference 2017, CSTIC 2017,
    Preprints | 2017
    Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Klimeck G; Morello A; Dzurak AS; Rahman R, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability, ,
    Preprints | 2017
    Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2017, Valley dependent anisotropic spin splitting in silicon quantum dots, ,
    Preprints | 2017
    Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen T; Rahman R; Rodwell MJW; Klimeck G, 2017, A Multiscale Modeling of Triple-Heterojunction Tunneling FETs, ,
    Preprints | 2017
    Ilatikhameneh H; Ameen T; Chen C; Klimeck G; Rahman R, 2017, Sensitivity Challenge of Steep Transistors, ,
    Preprints | 2017
    Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2017, Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions, ,
    Conference Papers | 2017
    Nishat MRK; Tankasala A; Kharche N; Rahman R; Ahmed SS, 2017, 'Multiscale-multiphysics modeling of nonpolar InGaN LEDs', in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, pp. 85 - 88,
    Preprints | 2017
    Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2017, Optimization of edge state velocity in the integer quantum Hall regime, ,
    Preprints | 2017
    Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, ,
    Preprints | 2017
    Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, ,
    Conference Papers | 2017
    Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop, SNW 2017, pp. 23 - 24,
    Preprints | 2016
    Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2016, Transport in vertically stacked hetero-structures from 2D materials, ,
    Preprints | 2016
    Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene, ,
    Conference Papers | 2016
    Fay P; Li W; Cao L; Pourang K; Islam SM; Lund C; Saima S; Ilatikhameneh H; Amin T; Huang J; Rahman R; Jena D; Keller S; Klimeck G, 2016, 'Novel III-N heterostructure devices for low-power logic and more', in 16th International Conference on Nanotechnology - IEEE NANO 2016, pp. 767 - 769,
    Conference Papers | 2016
    Huang JZ; Long P; Ilatikhameneh H; Ameen T; Rahman R; Povolotskyi M; Rodwell MJW; Klimeck G, 2016, 'Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5', in 2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), IEEE, PEOPLES R CHINA, Shanghai, pp. 914 - 914, presented at Progress in Electromagnetic Research Symposium (PIERS), PEOPLES R CHINA, Shanghai, 08 August 2016 - 11 August 2016,
    Preprints | 2016
    Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2016, Impact of Dimensionality on PN Junctions, ,
    Preprints | 2016
    Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass, ,
    Preprints | 2016
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, Design Rules for High Performance Tunnel Transistors from 2D Materials, ,
    Conference Papers | 2016
    Long P; Huang JZ; Povolotskyi M; Verreck D; Klimeck G; Rodwell MJW, 2016, 'High-current InP-based triple heterojunction tunnel transistors', in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), IEEE, presented at 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], 26 June 2016 - 30 June 2016,
    Conference Papers | 2016
    Long P; Povolotskyi M; Huang JZ; Ilatikhameneh H; Ameen T; Rahman R; Kubis T; Klimeck G; Rodwell MJW, 2016, 'Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors', in Device Research Conference - Conference Digest, DRC,
    Preprints | 2016
    Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions, ,
    Preprints | 2016
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, ,
    Preprints | 2016
    Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, Characterizing Si:P quantum dot qubits with spin resonance techniques, ,
    Preprints | 2015
    Ameen T; Ilatikhameneh H; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Wenner BR; Rahman R; Klimeck G, 2015, Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots, ,
    Preprints | 2015
    Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2015, Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors, ,
    Conference Papers | 2015
    Ameen TA; Ilatikhameneh H; Valencia D; Rahman R; Klimeck G, 2015, 'Engineering the optical transitions of self-assembled quantum dots', in 18th International Workshop on Computational Electronics, IWCE 2015,
    Preprints | 2015
    Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2015, Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET, ,
    Conference Papers | 2015
    Chen FW; Ilatikhameneh H; Klimeck G; Rahman R; Chu T; Chen Z, 2015, 'Achieving a higher performance in bilayer graphene FET - Strain engineering', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 177 - 181,
    Preprints | 2015
    Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Spin-lattice relaxation times of single donors and donor clusters in silicon, ,
    Preprints | 2015
    Ilatikhameneh H; Ameen T; Klimeck G; Rahman R, 2015, Universal Behavior of Strain in Quantum Dots, ,
    Preprints | 2015
    Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, Dielectric Engineered Tunnel Field-Effect Transistor, ,
    Conference Papers | 2015
    Ilatikhameneh H; Chen FW; Rahman R; Klimeck G, 2015, 'Electrically doped 2D material tunnel transistor', in 18th International Workshop on Computational Electronics, IWCE 2015,
    Preprints | 2015
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, Scaling Theory of Electrically Doped 2D Transistors, ,
    Conference Papers | 2015
    Ilatikhameneh H; Klimeck G; Rahman R, 2015, '2D tunnel transistors for ultra-low power applications: Promises and challenges', in 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings,
    Preprints | 2015
    Ilatikhameneh H; Klimeck G; Rahman R, 2015, Can Tunnel Transistors Scale Below 10nm?, ,
    Conference Papers | 2015
    Ilatikhameneh H; Novakovic B; Tan Y; Salmani-Jelodar M; Kubis T; Povolotskyi M; Rahman R; Klimeck G, 2015, 'Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors', in 2014 Silicon Nanoelectronics Workshop, SNW 2014,
    Conference Papers | 2015
    Ilatikhameneh H; Rahman R; Appenzeller J; Klimeck G, 2015, 'Electrically doped WTe2 tunnel transistors', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 270 - 272,
    Preprints | 2015
    Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2015, From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling, ,
    Preprints | 2015
    Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials, ,
    Preprints | 2015
    Laucht A; Muhonen JT; Mohiyaddin FA; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Electrically controlling single spin qubits in a continuous microwave field, ,
    Conference Papers | 2015
    Mohiyaddin FA; Rahman R; Kalra R; Lee S; Klimeck G; Hollenberg LCL; Yang CH; Rossi A; Dzurak AS; Morello A, 2015, 'Designing a large scale quantum computer with atomistic simulations', in 2014 Silicon Nanoelectronics Workshop, SNW 2014,
    Preprints | 2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, ,
    Preprints | 2015
    Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, ,
    Preprints | 2015
    Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations, ,
    Preprints | 2015
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, ,
    Conference Papers | 2015
    Tan YHM; Ryu H; Weber B; Lee S; Rahman R; Hollenberg LCL; Simmons MY; Klimeck G, 2015, 'Statistical modeling of ultra-scaled donor-based silicon phosphorus devices', in 2014 Silicon Nanoelectronics Workshop, SNW 2014,
    Preprints | 2015
    Tosi G; Mohiyaddin FA; Schmitt V; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, Silicon quantum processor with robust long-distance qubit couplings, ,
    Preprints | 2015
    Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, ,
    Preprints | 2015
    Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, ,
    Preprints | 2015
    Wang YE; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Engineering inter-qubit exchange coupling between donor bound electrons in silicon, ,
    Conference Papers | 2015
    Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Lee S; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2015, 'Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics', in 2014 Silicon Nanoelectronics Workshop, SNW 2014,
    Conference Papers | 2014
    Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924,
    Preprints | 2014
    Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, Coherent Control of a Single Silicon-29 Nuclear Spin Qubit, ,
    Preprints | 2014
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, ,
    Preprints | 2014
    Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, ,
    Preprints | 2012
    Nielsen E; Rahman R; Muller RP, 2012, A many-electron tight binding method for the analysis of quantum dot systems, ,
    Preprints | 2011
    Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, ,
    Conference Papers | 2011
    Neupane MR; Rahman R; Lake RK, 2011, 'Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects', in Proceedings of SPIE - The International Society for Optical Engineering,
    Preprints | 2011
    Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, ,
    Preprints | 2011
    Rahman R; Nielsen E; Muller RP; Carroll MS, 2011, Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric, ,
    Preprints | 2011
    Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, ,
    Preprints | 2011
    Witzel WM; Rahman R; Carroll MS, 2011, SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge, ,
    Preprints | 2010
    Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, ,
    Preprints | 2010
    Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, Coherent electron transport by adiabatic passage in an imperfect donor chain, ,
    Conference Papers | 2010
    Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010,
    Preprints | 2009
    Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, Multimillion Atom Simulations with NEMO 3-D, ,
    Conference Papers | 2009
    Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in AIP Conference Proceedings, pp. 93 - 94,
    Preprints | 2009
    Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, Mapping donor electron wave function deformations at sub-Bohr orbit resolution, ,
    Preprints | 2009
    Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, ,
    Preprints | 2009
    Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, ,
    Preprints | 2009
    Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, Atomistic simulations of adiabatic coherent electron transport in triple donor systems, ,
    Preprints | 2009
    Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2009, Stark tuning of the charge states of a two-donor molecule in silicon, ,
    Conference Papers | 2009
    Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009,
    Conference Papers | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM,
    Conference Papers | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167,
    Conference Papers | 2008
    Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series,
    Conference Papers | 2007
    Ahmed S; Usman M; Heitzinger C; Rahman R; Schliwa A; Klimeck G, 2007, 'Symmetry breaking and fine structure splitting in zincblende quantum dots: Atomistic simulations of long-range strain and piezoelectric field', in AIP Conference Proceedings, pp. 849 - 850,
    Preprints | 2007
    Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, High precision quantum control of single donor spins in silicon, ,

  • "Multi-nuclear spin register quantum computing in silicon", US Army Research Office, 2023-2027.
  • "Atomic scale control over quantum materials", ARC LIEF 2022.
  • “Enlightening single rare-earth atoms in scanning tunneling microscopy”, ARC Discovery Project 2021, (1/12021-31/12/2024).
  • “Engineering giant momentum asymmetry of quantum vacuum”, US DARPA, Dec 2020-Dec2021.
  • “Accelerated donor device development through atomistic modeling”, Silicon Quantum Computing Pty. Ltd. (May 2020-May 2024).
  • “Donor based quantum computing in silicon”, US Army Research Office, Jan 2017-May 2021.
  • “Designing quantum fluctuational meta-molecules for giant co-operative light-matter interaction beyond spectral boundaries”, US DARPA, Aug 2018-Feb 2020.

My Research Supervision

Research Associates:

Dr. Yuling Hsueh (Lecturer)

Dr. Hongyang Ma

Dr. Md. Serajum Monir

Dr. Mushita Masud Munia

PhD Students:

Pratik Chowdhury

Hannan Mousavi

Sarinle Yusuf

Priyangana Chatterjee

Alumni:

Dr. Edyta Osika (Postdoc)

Dr. Abu Mohammed Saffat-ee Huq (PhD)

Dr. Md. Serajum Monir (PhD)

Dr. Mushita Masud Munia (PhD)

Angus Worrall (Honours)

Zachary Kembrey (Honours)

My Teaching

First Year Physics: Mechanics, Thermal Physics and Waves: Physics 1121/1131 (1A)

Experimental and Computational Physics 3112

Quantum mechanics of solids Physics 3118

Past:

Electromagnetism Physics 2114

First Year Lab Director